首页> 外文OA文献 >Time-resolved cathodoluminescence of InGaAs/AlGaAs tetrahedral pyramidal quantum structures

【2h】

Time-resolved cathodoluminescence of InGaAs/AlGaAs tetrahedral pyramidal quantum structures

机译：InGaAs / AlGaAs四面体锥量子结构的时间分辨阴极发光

代理获取

本网站仅为用户提供外文OA文献查询和代理获取服务，本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文，但由于OA文献来源多样且变更频繁，仍可能出现获取不到、文献不完整或与标题不符等情况，如果获取不到我们将提供退款服务。请知悉。

页面导航

著录项
引文网络
相似文献
相关主题

著录项

作者
M. MERANO; SONDEREGGER S; CROTTINI A; COLLIN S; PELUCCHI E; RENUCCI P; MALKO A; BAIER MH; KAPON E; GANIERE JD; DEVEAUD B;
展开▼
作者单位

展开▼
年度 2006
总页数
原文格式 PDF
正文语种
中图分类

相似文献

外文文献
中文文献
专利

1. Time-resolved cathodoluminescence of InGaAs/AlGaAs tetrahedral pyramidal quantum structures [J] . M. MERANO, S. SONDEREGGER, A. CROTTINI, Applied physics. B, Lasers and optics . 2006,第1a2期

机译：InGaAs / AlGaAs四面体锥量子结构的时间分辨阴极发光
2. Cathodoluminescence characteristics of pseudomorphic modulation-doped quantum well AlGaAs/InGaAs/AlGaAs heterostructures at high carrier densities and their radiation damaging [J] . Khrustalev VS, Bobyl AV, Konnikov SG, Semiconductors . 2007,第4期

机译：高载流子密度下伪掺杂调制量子阱AlGaAs / InGaAs / AlGaAs异质结构的阴极发光特性及其辐射损伤
3. Cathodoluminescence characteristics of pseudomorphic modulation-doped quantum well AlGaAs/InGaAs/AlGaAs heterostructures at high carrier densities and their radiation damaging [J] . V.S.Khrustalev, A.V.Bobyl, S.G.Konnikov, Физика и техника полупроводников . 2007,第4期

机译：高载流子密度下伪掺杂调制量子阱AlGaAs / InGaAs / AlGaAs异质结构的阴极发光特性及其辐射损伤
4. Low temperature spectral cathodoluminescence study of InGaAs/InP quantum dot-like and quantum wire-like structures [C] . C Zanotti-Fregonara, C Rigo, A Stano, Royal Microscopical Society conference on microcopy of semiconducting materials . 1997

机译：InGaAs / InP量子点状和量子线状结构的低温光谱阴极发光研究
5. Breakdown behavior and optimization of AlGaAs/InGaAs pseudomorphic high electron mobility transistors. [D] . Palma, John Francis. 2011

机译：AlGaAs / InGaAs伪晶高电子迁移率晶体管的击穿行为和优化。
6. Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot [O] . Tarek A Ameen, Hesameddin Ilatikhameneh, Archana Tankasala, 2018

机译：掺杂的自组装InAs / InGaAs / GaAs / AlGaAs量子点中应变相关的光吸收的理论研究
7. MOVPE growth and properties of 111A-oriented piezoelectric InGaAs/GaAs/AlGaAs highly strained quantum well laser structures [O] . Kim Jongseok, Cho Soohaeng, Majerfeld A., 2004

机译：111 A取向压电InGaAs / GaAs / AlGaAs高应变量子阱激光器结构的MOVPE生长和性能
8. Characteristics of Lift-off Fabricated AlGaAs/INGaAs Single-Strained-Quantum-Well Structures on Glass and Silicon Substrates [R] . Klem, J. F. , Jones, E. D. , Myers, D. R. , 1988

机译：玻璃和硅衬底上剥离制备alGaas / INGaas单应变量子阱结构的特性

Time-resolved cathodoluminescence of InGaAs/AlGaAs tetrahedral pyramidal quantum structures

著录项

引文网络

相似文献

相关主题

期刊订阅